Enhancing Samsung’s design further, a master chip on each 4GB package embeds the data buffer function to optimise module performance and power consumption. However, instead of using wire bonding, the TSV packages use chip dies that are only a few micrometers thick, which are pierced with microscopic holes that are connected to electrodes passed through the holes. At first look, the chip might look like any other ordinary RAM module, but the company claims that the capacity and energy efficiency of this chip is next to none.
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According to The Inquirer, Samsung’s 128 GB TSV registered dual inline memory module (RDIMM) 144 DDR4 chips, arranged into 36 4GB DRAM packages.
The modules are aimed at enterprise servers and for data centres. Server rooms consume massive amounts of power and the high capacity and better efficiency of the 128GB DDR4 RAM modules will allow server computers to accommodate more amount of RAM without using up additional DIMM slots.
Samsung says that its new TSV DRAM module has the largest capacity and highest energy efficiency of any DRAM module available today, it promises operation at high speed with excellent reliability.
As a result servers can reach 2,400 megabits per second (Mbps), roughly twice their normal speed at half the power usage.
“We are responding to the growing demand for ultra-high capacity DRAM by accelerating production of TSV technology in the market and quickly ramping up 20nm 8Gb DRAM chips to improve manufacturing productivity”, added Samsung.
“We will continue to expand our technical cooperation with global leaders in servers, consumer electronics and emerging markets”, said Joo Sun Choi, executive vice president of Memory Sales and Marketing at Samsung Electronics.
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Samsung Electronics plans to begin mass production of the 128GB DDR4 load reduced DIMMs (LRDIMM) by the end of this year with the use of its TSV technology, providing the complete lineup of its new high-performance TSV DRAM modules.
