However, looking at things from a general perspective, it’s worth mentioning that right now Samsung’s main competitor in this field is none other than Toshiba, which is also working on NAND stacked memory chips that will store 64GB of data.
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Using a 48-layer 3-bit MLC 256Gb V-NAND flash chip results in a power consumption reduction of over 30% as compared to previous 32-layer 3-bit MLC, 128Gb V-NAND chips (when storing the same amount of data).
In a bid to focus and expand its premium level business in data center markets and enterprise segments, SAMSUNG ELECT LTD(F) (OTCMKTS:SSNLF) has begun the mass production of the 256GB V-NAND flashes.
Tech giant Samsung Electronics said Tuesday it has successfully mass-produced a 256Gb vertical NAND flash memory for the first time in the world.
The memory is built on 48 layers of three-bit multi-level-cell (MLC) arrays and offers 32 gigabytes of data storage on a single chip. The process to create the chips is also 40 percent more productive than last year as well using mostly existing equipment, since the company has had some practice in making them. Each chip contains over 85.3 billion cells in total.
The Korean chip maker plans to produce third-generation V-NAND throughout the remainder of 2015 in a bid to accelerate the adoption of terabyte-level SSDs.
Toshiba is already using 15nm dies so, despite the layering, the finished product will be competitively thin and is expected to find its way into the usual suspects, including consumer and enterprise SSD drives, smartphones, tablets and memory cards.
“We can now provide the most advanced memory solutions with even higher efficiency, based on improved performance, power utilization and manufacturing productivity, thereby accelerating growth of the high-performance and the high-density SSD markets”, said Jun Young-hyun, president of the memory business at Samsung Electronics.
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Samsung’s latest SAS SSD, the PM1633, is designed to meet all requirements of Serial Attached SCSI (SAS) interface based systems.
