Samsung Electronics announced that they will begin mass production of the first 256GB Universal Flash Storage (UFS) 2.0 standard for their high-end mobile products. The South Korean memory chip giant could make such a remarkable improvement within just a year thanks to its most advanced, compact V-NAND flash memory chips and a specially-designed high-performance controller that are used in the new UFS.
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Specs reveal the UFS memory handles up to 45,000 and 40,000 input/output operations per second for random reading and writing, which is more than two times faster than previous-gen UFS memory.
Samsung have not revealed any details on which devices will be using their new 256GB UFS storage, but we suspect that the Galaxy Note 6 will be one of them, as soon as we get some more details, we will let you guys know. Sequential write speeds are also quite impressive, reaching 260MB/s. Samsung boasts that this is approximately three times faster than high performance microSD cards and looks to be twice as fast as the company’s 128GB chip from past year.
Because of the technology used inside the 256GB UFS, the memory chip now supports seamless Ultra HD video playback and multitasking functionality on smartphones with larger screens.
“The chip will go into next-generation premium smartphones”, said a Samsung spokesman, who declined to name products and clients.
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When adopted to USB 3.0 interface, users will be able to transfer data much faster between mobile devices. That’s awesome news…except for the fact that it comes three days after the Galaxy S7 and Galaxy S7 Edge were announced, both of which do not include this new 256GB chip. It will take only 12 seconds to transfer a 5-gigabyte full-HD video, equivalent of a 90-minute movie. Given the fact that the iPhone 7 Plus is rumored to have 256 GB of storage, we would not be surprised to see Samsung flash in one of the tear downs of the next generation iPhone.
